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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H9435S P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) * 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features * RDS(on)=60m@VGS=-10V, ID=-5.3A * RDS(on)=90m@VGS=-4.5V, ID=-4.2A * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Fully Characterized Avalanche Voltage and Current * Improved Shoot-Through FOM 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RJC RJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings -30 20 -5.3 -20 2.5 -55 to +150 30 *2 Units V V A A W C C/W C/W Total Power Dissipation @TA=25oC Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (PCB mounted) 50 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H9435S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25C, unless otherwise noted) Symbol * Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS * Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, RL=15, ID=-1A, VGEN=-10V, RG=6 VDS=-15V, VGS=0V, f=1MHz VDS=-15V, ID=-5.3A, VGS=-10V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=-250uA VGS=-4.5V, ID=-4.2A VGS=-10V, ID=-5.3A VDS=VGS, ID=-250uA VDS=-24V, VGS=0V VGS=20V, VDS=0V VDS=-15V, ID=-5.3A 30 -1 4 Characteristic Test Conditions Min. Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 2/4 Typ. Max. Unit 82 50 7 90 60 -3 -1 100 - V m V uA nA S 9.52 3.43 1.71 551.57 90.96 60.79 10.8 2.33 22.53 3.87 Ns PF nC * Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=-5.3A -1.9 -1.3 A V Note: Pulse Test: Pulse Width 300us, Duty Cycle2% H9435S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SO-8 Dimension A G H9435S Marking: Pb Free Mark Pb-Free: " . " (Note) H Normal: None Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 3/4 S 8 B 7 6 5 C 4 J H I 9435 Control Code Pin 1 Index Date Code Pin1 Index Pin Style: 1,2,3: Source 4: Gate 5,6,7,8: Drain Note: Green label is used for pb-free packing Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 2 3 D E Part A K L N O Part A DIM A B C D E F G H I J K L M N O Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 M *: Typical, Unit: mm F 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H9435S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3oC/sec Pb-Free Assembly <3oC/sec 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec <3oC/sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245oC 5oC 260 C +0/-5 C o o Dipping time 5sec 1sec 5sec 1sec H9435S HSMC Product Specification |
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